Trap-Assisted Charge Injection into Large Bandgap Polymer Semiconductors

Spin Injection into Semiconductors

S 713 FRIDAY AFTERNOON, 8 NOVEMBER 2013 PLAZA BALLROOM F, 1:30 TO 4:30 Session HB SPIN INJECTION INTO SEMICONDUCTORS Georg Schmidt, Chair

Trap-assisted recombination in disordered organic semiconductors.

The trap-assisted recombination of electrons and holes in organic semiconductors is investigated. The extracted capture coefficients of the trap-assisted recombination process are thermally activated with an identical activation energy as measured for the hole mobility μ(p). We demonstrate that the rate limiting step for this mechanism is the diffusion of free holes towards trapped electrons in...

Spin Injection into Amorphous Semiconductors

Strain-assisted bandgap modulation in Zn based II-VI semiconductors

The electronic structure of bulk ZnX (X1⁄4O, S, Se, and Te) under uniaxial strain along the [0001] direction or equibiaxial strain along the (0001) plane is investigated using hybrid density functional theory calculations and many-body perturbation theory. It is shown that compressive uniaxial (or tensile equibiaxial) strains lead to a structural phase transition in all the ZnX systems. This is...

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. Because many figures-ofmerit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have potential compelling advantages over their...